features trenchfet power mosfet 175 c junction temperature optimized for high-side synchronous rectifier 100% r g tested applications desktop or server cpu core game station SUM40N02-12P vishay siliconix document number: 72111 s-42351?rev. d, 20-dec-04 www.vishay.com 1 n-channel 20-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) a q g (typ) 20 0.012 @ v gs = 10 v 40 a 75 20 0.026 @ v gs = 4.5 v 40 a 7.5 drain connected to tab to-263 s d g top view ordering information: SUM40N02-12P SUM40N02-12P?e3 n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 40 a c on ti nuous d ra i n c urren t (t j = 175 c) t c = 100 c i d 40 a a pulsed drain current i dm 90 maximum power dissipation b t c = 25 c p d 83 c w maximum power dissipation b t a = 25 c d p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mounted) d r thja 40 c/w junction-to-case r thjc 1.8 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUM40N02-12P vishay siliconix www.vishay.com 2 document number: 72111 s-42351?rev. d, 20-dec-04 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 20 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.85 2 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 20 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 20 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 90 a v gs = 10 v, i d = 20 a 0.0095 0.012 drain source on state resistance a r v gs = 10 v, i d = 20 a, t j = 125 c 0.0175 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a, t j = 175 c 0.022 v gs = 4.5 v, i d = 15 a 0.021 0.026 forward transconductance a g fs v ds = 15 v, i d = 20 a 10 s dynamic b input capacitance c iss 1000 output capacitance c oss v gs = 0 v, v ds = 10 v, f = 1 mhz 370 pf reverse transfer capacitance c rss 180 total gate charge b q g 7.5 12 gate-source charge b q gs v ds = 10 v, v gs = 4.5 v, i d = 40 a 3.5 nc gate-drain charge b q gd ds , gs , d 2.6 gate resistance r g 1.5 3.0 5.1 turn-on delay time b t d(on) 11 20 rise time b t r v dd = 10 v, r l = 0.25 10 15 ns turn-off delay time b t d(off) v dd = 10 v , r l = 0 . 25 i d 40 a, v gen = 10 v, r g = 2.5 24 35 ns fall time b t f 9 15 source-drain diode ratings and characteristics (t c = 25 c) c continuous current i s 40 a pulsed current i sm 90 a forward voltage a v sd i f = 40 a, v gs = 0 v 1.1 1.5 v reverse recovery time t rr 20 40 ns peak reverse recovery current i rm i f = 40 a, di/dt = 100 a/ s 0.7 1.1 a reverse recovery charge q rr f 0.007 0.022 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. independent of operating temperature. c. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SUM40N02-12P vishay siliconix document number: 72111 s-42351?rev. d, 20-dec-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 300 600 900 1200 1500 048121620 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 0 1020304050 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 153045607590 0 15 30 45 60 75 90 01234567 0 15 30 45 60 75 90 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c 125 c 3 v t c = ? 55 c v ds = 10 v i d = 40 a v gs = 10 thru 7 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) c rss 6 v 5 v
SUM40N02-12P vishay siliconix www.vishay.com 4 document number: 72111 s-42351?rev. d, 20-dec-04 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 20 a t j = 25 c t j = 150 c 0 20 22 24 26 28 30 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) (v) v (br)dss i d = 250 a r ds(on) ? on-resiistance (normalized)
SUM40N02-12P vishay siliconix document number: 72111 s-42351?rev. d, 20-dec-04 www.vishay.com 5 thermal ratings 0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area 1000 10 0.1 1 10 100 *limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms dc, 100 ms 10, 100 s single pulse 0.05 0.02 1 10 ? 4 v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?72111 .
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